Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced `cut-off' at ELO is observed for up to approximately 3 ps after photoexcitation. Monte Carlo simulations show that this behav...
Full description
Bibliographic Details
| Main Authors: |
O'Sullivan, E,
Hess, S,
Taylor, R,
Cain, N,
Roberts, V,
Roberts, J,
Ryan, J |
|---|
| Format: | Journal article
|
|---|
| Language: | English |
|---|
| Published: |
Elsevier
1999
|
|---|