Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission and reflection. A non-thermal electron distribution with a pronounced `cut-off' at ELO is observed for up to approximately 3 ps after photoexcitation. Monte Carlo simulations show that this behav...
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Detalhes bibliográficos
| Principais autores: |
O'Sullivan, E,
Hess, S,
Taylor, R,
Cain, N,
Roberts, V,
Roberts, J,
Ryan, J |
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| Formato: | Journal article
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| Idioma: | English |
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| Publicado em: |
Elsevier
1999
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