Broadband terahertz emission from ion-implanted semiconductors
The terahertz radiation emitted from Fe+ ion-implanted InGaAs surface emitters and InP photoconductive switches was measured. We experimentally observe an increase in the spectral width of terahertz radiation at greater ion damage, which we attribute to the ultrafast capture of photoexcited carriers...
| मुख्य लेखकों: | , , , , , |
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| स्वरूप: | Conference item |
| प्रकाशित: |
2006
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