ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS

ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS

Opis bibliograficzny
Główni autorzy:	Nicholas, R, Kressrogers, E, Kuchar, F, Pepper, M, Portal, J, Stradling, R
Format:	Journal article
Wydane:	1980

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