ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS

ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS

Podrobná bibliografie
Hlavní autoři:	Nicholas, R, Kressrogers, E, Kuchar, F, Pepper, M, Portal, J, Stradling, R
Médium:	Journal article
Vydáno:	1980

Podobné jednotky

TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
Autor: Kressrogers, E, a další
Vydáno: (1980)

SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T
Autor: Nicholas, R, a další
Vydáno: (1979)

THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
Autor: Kressrogers, E, a další
Vydáno: (1983)

THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
Autor: Kressrogers, E, a další
Vydáno: (1983)

TIME-DEPENDENT ANOMALOUS THRESHOLD IN SILICON MOS DEVICES FABRICATED ON HIGH-RESISTIVITY SUBSTRATES
Autor: Nicholas, R, a další
Vydáno: (1976)

CYCLOTRON-RESONANCE STUDIES ON BULK AND TWO-DIMENSIONAL CONDUCTION ELECTRONS IN INSE
Autor: Kressrogers, E, a další
Vydáno: (1982)

Transport in the presence of inverse bremsstrahlung heating and magnetic fields
Autor: Ridgers, C, a další
Vydáno: (2008)

Transport in the presence of inverse bremsstrahlung heating and magnetic fields
Autor: Ridgers, C, a další
Vydáno: (2008)

TWO-DIMENSIONAL BEHAVIOR DUE TO ELECTRONS BOUND AT DEFECTS IN INSE
Autor: Nicholas, R, a další
Vydáno: (1982)

Formation of Cu Nanotwins on Silicon Carbide Wafers with Cr Adhesive Layer under Various Substrate Bias
Autor: Devi Indrawati Syafei, a další
Vydáno: (2023-10-01)

IMPURITY-ASSOCIATED MAGNETOPHONON RESONANCE IN N-TYPE SILICON
Autor: Portal, J, a další
Vydáno: (1979)

Experimental study of electron velocity overshoot in silicon inversion layers
Autor: Hu, Hang
Vydáno: (2005)

Impurity Properties of Inversion Layers with Electronic and Substrate Quantum Screening
Autor: Kamo Aharonyan, a další
Vydáno: (2023-01-01)

NEUTRON REFLECTIVITY FROM A SILICON-NITRIDE LAYER ON A SILICON SUBSTRATE
Autor: Ashworth, C, a další
Vydáno: (1989)

EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON
Autor: Cooke, R, a další
Vydáno: (1978)

EVIDENCE FOR A CONTRIBUTION TO EXTRINSIC PHOTOCONDUCTIVE SIGNAL BY HOPPING THROUGH EXCITED-STATES OF DONORS IN SILICON AND CDTE
Autor: Carter, A, a další
Vydáno: (1977)

Ultralow Temperature Studies of Electronic Conduction in Submicron Silicon Inversion Layers
Autor: Kastner, Marc A.
Vydáno: (2010)

Substrate and p-layer effects on polymorphous silicon solar cells
Autor: Abolmasov S.N., a další
Vydáno: (2014-07-01)

Fabrication of Polyimide Optical Waveguide on Silicon Dioxide Layer Stacked Silicon Substrate
Autor: Dadin Mahmudin, a další
Vydáno: (2017-12-01)

HIGH MAGNETIC-FIELD CHARACTERIZATION OF MOCVD HETEROSTRUCTURES AND SUPERLATTICES
Autor: Nicholas, R, a další
Vydáno: (1984)

HIGH-FIELD MAGNETO-TRANSPORT MEASUREMENTS IN GAAS-GAALAS MULTILAYERS
Autor: Nicholas, R, a další
Vydáno: (1982)

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor
Autor: Ramdas P. Khade, a další
Vydáno: (2023-01-01)

A Model for Neutral Defect Limited Electron Mobility in Strained-Silicon Inversion Layers
Autor: Shang-Hsun Hsieh, a další
Vydáno: (2017-01-01)

Formation of silicon layer through aluminothermic reduction of quartz substrates
Autor: Muhammad Monirul Islam, a další
Vydáno: (2022-09-01)

Optical observation of single layer graphene on silicon nitride substrate
Autor: Jin Yong An, a další
Vydáno: (2018-01-01)

Edge effects in an insulating state of an electron-hole system in magnetic field
Autor: Takashina, K, a další
Vydáno: (2001)

BULK AND TRANSFER DOPING EFFECTS IN ALXGA1-XAS LAYERS GROWN ON SEMI-INSULATING GAAS SUBSTRATES
Autor: Nicholas, R, a další
Vydáno: (1984)

Features of Electrophysical Diagnostics of Schottky Field Transistors Based on GaAs Epitaxial Layers on Silicon Substrates for Microsystem Applications
Autor: T. Benko, a další
Vydáno: (2019-10-01)

Cross-plane thermal transport measurements across CVD grown few layer graphene films on a silicon substrate
Autor: Baojie Lu, a další
Vydáno: (2019-04-01)

HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES
Autor: Portal, J, a další
Vydáno: (1983)

Improved Thermal Anisotropy of Multi-Layer Tungsten Telluride on Silicon Substrate
Autor: Mengke Fang, a další
Vydáno: (2023-06-01)

Thermocapillary rupture of a horizontal liquid layer on a silicon substrate
Autor: Kochkin Dmitry, a další
Vydáno: (2019-01-01)

Insulating states of a 2-dimensional electron-hole system in high magnetic field
Autor: Takashina, K, a další
Vydáno: (2001)

Enhancement of reflectance reduction of solar cells by a silicon nanoparticle layer on a textured silicon substrate
Autor: Shinya Kato, a další
Vydáno: (2022-12-01)

Ultrahigh magnetic field study of layer split bands in graphite.
Autor: Nicholas, R, a další
Vydáno: (2013)

MM-Wave Metamaterial Adjustable Antenna on Magnetically Biased Ferritic Substrate
Autor: Gheorghe Sajin, a další
Vydáno: (2013-01-01)

Design of monophasic pulsed magnetic fields for use in low bias fields
Autor: N. Prabhu Gaunkar, a další
Vydáno: (2020-02-01)

Limitations and Biases in the Retrieval of the Polar Magnetic Field. I. The Role of the Magnetic Filling Factor in Milne–Eddington Inversions of Simulated Hinode/SP Data
Autor: Rebecca Centeno, a další
Vydáno: (2023-01-01)

SUBBAND-LANDAU LEVEL COUPLING IN A TWO-DIMENSIONAL ELECTRON-GAS IN TILTED MAGNETIC-FIELDS
Autor: Brummell, M, a další
Vydáno: (1986)

Linear and nonlinear resonant properties of electron gas in n-InSb and graphene layers in terahertz range in bias magnetic fields
Autor: V Grimalsky, a další
Vydáno: (2025-01-01)