ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
Main Authors: | Nicholas, R, Kressrogers, E, Kuchar, F, Pepper, M, Portal, J, Stradling, R |
---|---|
Format: | Journal article |
Published: |
1980
|
Similar Items
-
TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
by: Kressrogers, E, et al.
Published: (1980) -
SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T
by: Nicholas, R, et al.
Published: (1979) -
THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
by: Kressrogers, E, et al.
Published: (1983) -
THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
by: Kressrogers, E, et al.
Published: (1983) -
TIME-DEPENDENT ANOMALOUS THRESHOLD IN SILICON MOS DEVICES FABRICATED ON HIGH-RESISTIVITY SUBSTRATES
by: Nicholas, R, et al.
Published: (1976)