ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
मुख्य लेखकों: | Nicholas, R, Kressrogers, E, Kuchar, F, Pepper, M, Portal, J, Stradling, R |
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स्वरूप: | Journal article |
प्रकाशित: |
1980
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समान संसाधन
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TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
द्वारा: Kressrogers, E, और अन्य
प्रकाशित: (1980) -
SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T
द्वारा: Nicholas, R, और अन्य
प्रकाशित: (1979) -
THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
द्वारा: Kressrogers, E, और अन्य
प्रकाशित: (1983) -
THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
द्वारा: Kressrogers, E, और अन्य
प्रकाशित: (1983) -
TIME-DEPENDENT ANOMALOUS THRESHOLD IN SILICON MOS DEVICES FABRICATED ON HIGH-RESISTIVITY SUBSTRATES
द्वारा: Nicholas, R, और अन्य
प्रकाशित: (1976)