Steady-state thermal modelling of a power module: An N-layer Fourier approach
The steady-state thermal modelling of a rectangular N-layer structure with an arbitrary number of rectangular heat sources on the top surface is obtained by Fourier series solution. As the structure of power modules can be closely approximated as a rectangular N-layer structure, this model may be us...
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Format: | Journal article |
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IEEE
2018
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_version_ | 1797063705194659840 |
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author | Choudhury, K Rogers, D |
author_facet | Choudhury, K Rogers, D |
author_sort | Choudhury, K |
collection | OXFORD |
description | The steady-state thermal modelling of a rectangular N-layer structure with an arbitrary number of rectangular heat sources on the top surface is obtained by Fourier series solution. As the structure of power modules can be closely approximated as a rectangular N-layer structure, this model may be used to accurately estimate the temperature field occurring in such modules. Various simplified structures are analysed to understand the effects of structural approximation on the temperature field. The Fourier-based method developed in this work is compared with FEM simulation and an excellent matching (approximately 0.27% temperature error) is found in the centres of the semiconductor dies. Experimental temperature measurements taken at the surface of a commercial SiC power module are also presented, demonstrating agreement in the centres of the die regions to within 3.5%. |
first_indexed | 2024-03-06T21:03:44Z |
format | Journal article |
id | oxford-uuid:3bc0ae6a-de83-4416-92cf-9bb78ee23d65 |
institution | University of Oxford |
last_indexed | 2024-03-06T21:03:44Z |
publishDate | 2018 |
publisher | IEEE |
record_format | dspace |
spelling | oxford-uuid:3bc0ae6a-de83-4416-92cf-9bb78ee23d652022-03-26T14:09:24ZSteady-state thermal modelling of a power module: An N-layer Fourier approachJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:3bc0ae6a-de83-4416-92cf-9bb78ee23d65Symplectic Elements at OxfordIEEE2018Choudhury, KRogers, DThe steady-state thermal modelling of a rectangular N-layer structure with an arbitrary number of rectangular heat sources on the top surface is obtained by Fourier series solution. As the structure of power modules can be closely approximated as a rectangular N-layer structure, this model may be used to accurately estimate the temperature field occurring in such modules. Various simplified structures are analysed to understand the effects of structural approximation on the temperature field. The Fourier-based method developed in this work is compared with FEM simulation and an excellent matching (approximately 0.27% temperature error) is found in the centres of the semiconductor dies. Experimental temperature measurements taken at the surface of a commercial SiC power module are also presented, demonstrating agreement in the centres of the die regions to within 3.5%. |
spellingShingle | Choudhury, K Rogers, D Steady-state thermal modelling of a power module: An N-layer Fourier approach |
title | Steady-state thermal modelling of a power module: An N-layer Fourier approach |
title_full | Steady-state thermal modelling of a power module: An N-layer Fourier approach |
title_fullStr | Steady-state thermal modelling of a power module: An N-layer Fourier approach |
title_full_unstemmed | Steady-state thermal modelling of a power module: An N-layer Fourier approach |
title_short | Steady-state thermal modelling of a power module: An N-layer Fourier approach |
title_sort | steady state thermal modelling of a power module an n layer fourier approach |
work_keys_str_mv | AT choudhuryk steadystatethermalmodellingofapowermoduleannlayerfourierapproach AT rogersd steadystatethermalmodellingofapowermoduleannlayerfourierapproach |