Steady-state thermal modelling of a power module: An N-layer Fourier approach

The steady-state thermal modelling of a rectangular N-layer structure with an arbitrary number of rectangular heat sources on the top surface is obtained by Fourier series solution. As the structure of power modules can be closely approximated as a rectangular N-layer structure, this model may be us...

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Main Authors: Choudhury, K, Rogers, D
Format: Journal article
Published: IEEE 2018
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author Choudhury, K
Rogers, D
author_facet Choudhury, K
Rogers, D
author_sort Choudhury, K
collection OXFORD
description The steady-state thermal modelling of a rectangular N-layer structure with an arbitrary number of rectangular heat sources on the top surface is obtained by Fourier series solution. As the structure of power modules can be closely approximated as a rectangular N-layer structure, this model may be used to accurately estimate the temperature field occurring in such modules. Various simplified structures are analysed to understand the effects of structural approximation on the temperature field. The Fourier-based method developed in this work is compared with FEM simulation and an excellent matching (approximately 0.27% temperature error) is found in the centres of the semiconductor dies. Experimental temperature measurements taken at the surface of a commercial SiC power module are also presented, demonstrating agreement in the centres of the die regions to within 3.5%.
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spelling oxford-uuid:3bc0ae6a-de83-4416-92cf-9bb78ee23d652022-03-26T14:09:24ZSteady-state thermal modelling of a power module: An N-layer Fourier approachJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:3bc0ae6a-de83-4416-92cf-9bb78ee23d65Symplectic Elements at OxfordIEEE2018Choudhury, KRogers, DThe steady-state thermal modelling of a rectangular N-layer structure with an arbitrary number of rectangular heat sources on the top surface is obtained by Fourier series solution. As the structure of power modules can be closely approximated as a rectangular N-layer structure, this model may be used to accurately estimate the temperature field occurring in such modules. Various simplified structures are analysed to understand the effects of structural approximation on the temperature field. The Fourier-based method developed in this work is compared with FEM simulation and an excellent matching (approximately 0.27% temperature error) is found in the centres of the semiconductor dies. Experimental temperature measurements taken at the surface of a commercial SiC power module are also presented, demonstrating agreement in the centres of the die regions to within 3.5%.
spellingShingle Choudhury, K
Rogers, D
Steady-state thermal modelling of a power module: An N-layer Fourier approach
title Steady-state thermal modelling of a power module: An N-layer Fourier approach
title_full Steady-state thermal modelling of a power module: An N-layer Fourier approach
title_fullStr Steady-state thermal modelling of a power module: An N-layer Fourier approach
title_full_unstemmed Steady-state thermal modelling of a power module: An N-layer Fourier approach
title_short Steady-state thermal modelling of a power module: An N-layer Fourier approach
title_sort steady state thermal modelling of a power module an n layer fourier approach
work_keys_str_mv AT choudhuryk steadystatethermalmodellingofapowermoduleannlayerfourierapproach
AT rogersd steadystatethermalmodellingofapowermoduleannlayerfourierapproach