The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown
We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though...
| প্রধান লেখক: | , , , , , |
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| বিন্যাস: | Conference item |
| প্রকাশিত: |
2002
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| সংক্ষিপ্ত: | We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though still smaller than those reported for single-carrier type systems, The channel width dependence shows two regimes of behaviour. States with larger critical cur-rents ( > 5 muA) have linear width dependence. while for narrower channel widths where the critical current is smaller, the critical current has a superlinear relationship with the channel width. (C) 2002 Elsevier Science B.V. All rights reserved. |
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