The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown
We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though...
| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Conference item |
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2002
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| _version_ | 1826268137032515584 |
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| author | Takashina, K Nicholas, R Kardynal, B Mason, N Maude, D Portal, J |
| author_facet | Takashina, K Nicholas, R Kardynal, B Mason, N Maude, D Portal, J |
| author_sort | Takashina, K |
| collection | OXFORD |
| description | We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though still smaller than those reported for single-carrier type systems, The channel width dependence shows two regimes of behaviour. States with larger critical cur-rents ( > 5 muA) have linear width dependence. while for narrower channel widths where the critical current is smaller, the critical current has a superlinear relationship with the channel width. (C) 2002 Elsevier Science B.V. All rights reserved. |
| first_indexed | 2024-03-06T21:04:59Z |
| format | Conference item |
| id | oxford-uuid:3c23e3fc-c1b7-4ac8-9b9f-6df8aa0add53 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T21:04:59Z |
| publishDate | 2002 |
| record_format | dspace |
| spelling | oxford-uuid:3c23e3fc-c1b7-4ac8-9b9f-6df8aa0add532022-03-26T14:11:47ZThe quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdownConference itemhttp://purl.org/coar/resource_type/c_5794uuid:3c23e3fc-c1b7-4ac8-9b9f-6df8aa0add53Symplectic Elements at Oxford2002Takashina, KNicholas, RKardynal, BMason, NMaude, DPortal, JWe examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though still smaller than those reported for single-carrier type systems, The channel width dependence shows two regimes of behaviour. States with larger critical cur-rents ( > 5 muA) have linear width dependence. while for narrower channel widths where the critical current is smaller, the critical current has a superlinear relationship with the channel width. (C) 2002 Elsevier Science B.V. All rights reserved. |
| spellingShingle | Takashina, K Nicholas, R Kardynal, B Mason, N Maude, D Portal, J The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown |
| title | The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown |
| title_full | The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown |
| title_fullStr | The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown |
| title_full_unstemmed | The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown |
| title_short | The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown |
| title_sort | quantum hall effect in an inas gasb based electron hole system and its current driven breakdown |
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