RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.
Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The compositio...
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| 格式: | Journal article |
| 語言: | English |
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1985
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| _version_ | 1826268182861578240 |
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| author | Grovenor, C Cerezo, A Smith, G |
| author_facet | Grovenor, C Cerezo, A Smith, G |
| author_sort | Grovenor, C |
| collection | OXFORD |
| description | Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The composition of the Si/thermal oxide interface, and of native oxide layers, has also been investigated, showing that the native oxide is stoichiometric SiO and that an intermediate SiO layer exists at the Si/thermal oxide interface. |
| first_indexed | 2024-03-06T21:05:44Z |
| format | Journal article |
| id | oxford-uuid:3c61cdd1-6c5b-47eb-999b-1a1ae2fa2c1c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:05:44Z |
| publishDate | 1985 |
| record_format | dspace |
| spelling | oxford-uuid:3c61cdd1-6c5b-47eb-999b-1a1ae2fa2c1c2022-03-26T14:13:18ZRECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:3c61cdd1-6c5b-47eb-999b-1a1ae2fa2c1cEnglishSymplectic Elements at Oxford1985Grovenor, CCerezo, ASmith, GPulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The composition of the Si/thermal oxide interface, and of native oxide layers, has also been investigated, showing that the native oxide is stoichiometric SiO and that an intermediate SiO layer exists at the Si/thermal oxide interface. |
| spellingShingle | Grovenor, C Cerezo, A Smith, G RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS. |
| title | RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS. |
| title_full | RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS. |
| title_fullStr | RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS. |
| title_full_unstemmed | RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS. |
| title_short | RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS. |
| title_sort | recent developments in the study of semiconductors by atom probe microanalysis |
| work_keys_str_mv | AT grovenorc recentdevelopmentsinthestudyofsemiconductorsbyatomprobemicroanalysis AT cerezoa recentdevelopmentsinthestudyofsemiconductorsbyatomprobemicroanalysis AT smithg recentdevelopmentsinthestudyofsemiconductorsbyatomprobemicroanalysis |