Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.

The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investigated using time-resolved photoluminescence spectroscopy at 10 K. By probing the photoluminescence at the band edge of GaAs, we observe strong carrier lifetime enhancement for nanowires blended with s...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Yong, C, Noori, K, Gao, Q, Joyce, H, Tan, H, Jagadish, C, Giustino, F, Johnston, M, Herz, L
Fformat:	Journal article
Iaith:	English
Cyhoeddwyd:	2012

Eitemau Tebyg

Picosecond carrier lifetime measurements on a single GaAs Nanowire
gan: Parkinson, P, et al.
Cyhoeddwyd: (2012)

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
gan: Jiang, N, et al.
Cyhoeddwyd: (2012)

Transient terahertz conductivity of GaAs nanowires
gan: Parkinson, P, et al.
Cyhoeddwyd: (2007)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
gan: Jiang, N, et al.
Cyhoeddwyd: (2012)

Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
gan: Parkinson, P, et al.
Cyhoeddwyd: (2012)

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
gan: Jiang, N, et al.
Cyhoeddwyd: (2013)

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.
gan: Boland, J, et al.
Cyhoeddwyd: (2016)

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
gan: Joyce, H, et al.
Cyhoeddwyd: (2014)

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
gan: Joyce, H, et al.
Cyhoeddwyd: (2017)

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
gan: Joyce, H, et al.
Cyhoeddwyd: (2013)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
gan: Joyce, H, et al.
Cyhoeddwyd: (2007)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
gan: Paladugu, M, et al.
Cyhoeddwyd: (2008)

Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping
gan: Boland, J, et al.
Cyhoeddwyd: (2016)

Self-healing of fractured GaAs nanowires.
gan: Wang, Y, et al.
Cyhoeddwyd: (2011)

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
gan: Perera, S, et al.
Cyhoeddwyd: (2008)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
gan: Joyce, H, et al.
Cyhoeddwyd: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
gan: Joyce, H, et al.
Cyhoeddwyd: (2011)

Understanding the true shape of Au-catalyzed GaAs nanowires.
gan: Jiang, N, et al.
Cyhoeddwyd: (2014)

Growth mechanism of truncated triangular GaAs nanowires
gan: Zou, J, et al.
Cyhoeddwyd: (2006)

Growth of straight InAs-on-GaAs nanowire heterostructures
gan: Messing, M, et al.
Cyhoeddwyd: (2011)

Super deformability and Young's modulus of GaAs nanowires.
gan: Wang, Y, et al.
Cyhoeddwyd: (2011)

Understanding the kink formation in GaAs/InAs heterostructural nanowires
gan: Paladugu, M, et al.
Cyhoeddwyd: (2006)

Vertically standing Ge nanowires on GaAs(110) substrates
gan: Song, MS, et al.
Cyhoeddwyd: (2008)

Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.
gan: Paladugu, M, et al.
Cyhoeddwyd: (2009)

Improved carrier collection in intermixed InGaAs/GaAs quantum wells
gan: Dao, L, et al.
Cyhoeddwyd: (1998)

Optoelectronic properties of GaAs nanowire photodetector
gan: Wang, H, et al.
Cyhoeddwyd: (2012)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
gan: Smith, L, et al.
Cyhoeddwyd: (2007)

Evolution of epitaxial InAs nanowires on GaAs 111B.
gan: Zhang, X, et al.
Cyhoeddwyd: (2009)

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
gan: M. Jansson, et al.
Cyhoeddwyd: (2023-08-01)

Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
gan: Joyce, H, et al.
Cyhoeddwyd: (2006)

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
gan: Paladugu, M, et al.
Cyhoeddwyd: (2008)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
gan: Titova, L, et al.
Cyhoeddwyd: (2006)

Novel growth and properties of GaAs nanowires on Si substrates.
gan: Kang, J, et al.
Cyhoeddwyd: (2010)

Optical properties of single InP and GaAs nanowire heterostructures
gan: Jackson, H, et al.
Cyhoeddwyd: (2008)

Optically pumped room-temperature GaAs nanowire lasers
gan: Saxena, D, et al.
Cyhoeddwyd: (2013)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
gan: Kang, J, et al.
Cyhoeddwyd: (2011)

Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
gan: Paladugu, M, et al.
Cyhoeddwyd: (2007)

Evolution of wurtzite structured GaAs shells around InAs nanowire cores
gan: Paladugu, M, et al.
Cyhoeddwyd: (2009)

Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
gan: Nian Jiang, et al.
Cyhoeddwyd: (2020-12-01)

Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.
gan: Parkinson, P, et al.
Cyhoeddwyd: (2009)