Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution

Εμφάνιση άλλων εκδόσεων (1)

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Holmes, M, Park, Y, Wang, X, Chan, C, Reid, B, Kim, H, Luo, J, Warner, J, Taylor, R
Μορφή:	Journal article
Έκδοση:	2012

Παρόμοια τεκμήρια

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
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Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
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Optical studies on a single GaN nanocolumn containing a single In x Ga1-x N quantum disk
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Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
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Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
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Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
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Well-arranged novel InGaN hexagonal nanoplates at the tops of nitrogen-polarity GaN nanocolumn arrays
ανά: Tetsuya Kouno, κ.ά.
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Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks (vol 23, 405602, 2012)
ανά: Park, Y, κ.ά.
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Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
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Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
ανά: Na, J, κ.ά.
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Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
ανά: Chua, Soo-Jin, κ.ά.
Έκδοση: (2003)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
ανά: Song, T.L., κ.ά.
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Ga-polar GaN nanocolumn arrays with semipolar faceted tips
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Luminescence properties of isolated InGaN/GaN quantum dots
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Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
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Progress in the optical studies of single InGaN/GaN quantum dots
ανά: Jarjour, A, κ.ά.
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Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells
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Electrically driven single InGaN/GaN quantum dot emission
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Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templates
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On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
ανά: Kyaw, Zabu, κ.ά.
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Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells
ανά: Wei Liu, κ.ά.
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Quantum dot emission from selectively-grown InGaN/GaN micropyramid arrays
ανά: Taylor, R, κ.ά.
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Quantum dot emission from site-controlled InGaN/GaN micropyramid arrays
ανά: Edwards, P, κ.ά.
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Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
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Two-photon absorption from single InGaN/GaN quantum dots
ανά: Jarjour, A, κ.ά.
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Growth modes in heteroepitaxy of InGaN on GaN
ανά: Oliver, R, κ.ά.
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