The influence of nitrogen on dislocation locking in float-zone silicon
Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and tempera...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
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Trans Tech Publications Ltd
2005
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| _version_ | 1826268416971898880 |
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| author | Murphy, J Giannattasio, A Alpass, C Senkader, S Falster, R Wilshaw, P |
| author_facet | Murphy, J Giannattasio, A Alpass, C Senkader, S Falster, R Wilshaw, P |
| author_sort | Murphy, J |
| collection | OXFORD |
| description | Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and temperature (550 to 830°C). For all conditions investigated the locking effect was found to increase linearly with annealing time before saturating. It is assumed that the rate of increase of unlocking stress with annealing time is a measure of transport of nitrogen to the dislocation core. This rate of increase was found to depend linearly on nitrogen concentration, which is consistent with transport by a dimeric species, whose activation energy for diffusion is approximately 1.4eV. The saturation unlocking stress has been found to be dependent on the nitrogen concentration. Additionally, the temperature dependence of the stress required to move dislocations immobilised by nitrogen impurities has been studied. By assuming a value for the binding energy of the nitrogen to the dislocation, the density of the locking species at the dislocation core has been calculated. |
| first_indexed | 2024-03-06T21:09:21Z |
| format | Journal article |
| id | oxford-uuid:3d9a344f-2fae-4801-90af-e595cfb25834 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:09:21Z |
| publishDate | 2005 |
| publisher | Trans Tech Publications Ltd |
| record_format | dspace |
| spelling | oxford-uuid:3d9a344f-2fae-4801-90af-e595cfb258342022-03-26T14:20:26ZThe influence of nitrogen on dislocation locking in float-zone siliconJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:3d9a344f-2fae-4801-90af-e595cfb25834EnglishSymplectic Elements at OxfordTrans Tech Publications Ltd2005Murphy, JGiannattasio, AAlpass, CSenkader, SFalster, RWilshaw, PDislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and temperature (550 to 830°C). For all conditions investigated the locking effect was found to increase linearly with annealing time before saturating. It is assumed that the rate of increase of unlocking stress with annealing time is a measure of transport of nitrogen to the dislocation core. This rate of increase was found to depend linearly on nitrogen concentration, which is consistent with transport by a dimeric species, whose activation energy for diffusion is approximately 1.4eV. The saturation unlocking stress has been found to be dependent on the nitrogen concentration. Additionally, the temperature dependence of the stress required to move dislocations immobilised by nitrogen impurities has been studied. By assuming a value for the binding energy of the nitrogen to the dislocation, the density of the locking species at the dislocation core has been calculated. |
| spellingShingle | Murphy, J Giannattasio, A Alpass, C Senkader, S Falster, R Wilshaw, P The influence of nitrogen on dislocation locking in float-zone silicon |
| title | The influence of nitrogen on dislocation locking in float-zone silicon |
| title_full | The influence of nitrogen on dislocation locking in float-zone silicon |
| title_fullStr | The influence of nitrogen on dislocation locking in float-zone silicon |
| title_full_unstemmed | The influence of nitrogen on dislocation locking in float-zone silicon |
| title_short | The influence of nitrogen on dislocation locking in float-zone silicon |
| title_sort | influence of nitrogen on dislocation locking in float zone silicon |
| work_keys_str_mv | AT murphyj theinfluenceofnitrogenondislocationlockinginfloatzonesilicon AT giannattasioa theinfluenceofnitrogenondislocationlockinginfloatzonesilicon AT alpassc theinfluenceofnitrogenondislocationlockinginfloatzonesilicon AT senkaders theinfluenceofnitrogenondislocationlockinginfloatzonesilicon AT falsterr theinfluenceofnitrogenondislocationlockinginfloatzonesilicon AT wilshawp theinfluenceofnitrogenondislocationlockinginfloatzonesilicon AT murphyj influenceofnitrogenondislocationlockinginfloatzonesilicon AT giannattasioa influenceofnitrogenondislocationlockinginfloatzonesilicon AT alpassc influenceofnitrogenondislocationlockinginfloatzonesilicon AT senkaders influenceofnitrogenondislocationlockinginfloatzonesilicon AT falsterr influenceofnitrogenondislocationlockinginfloatzonesilicon AT wilshawp influenceofnitrogenondislocationlockinginfloatzonesilicon |