The influence of nitrogen on dislocation locking in float-zone silicon

The influence of nitrogen on dislocation locking in float-zone silicon

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Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and tempera...

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Xehetasun bibliografikoak
Egile Nagusiak:	Murphy, J, Giannattasio, A, Alpass, C, Senkader, S, Falster, R, Wilshaw, P
Formatua:	Journal article
Hizkuntza:	English
Argitaratua:	Trans Tech Publications Ltd 2005

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