The influence of nitrogen on dislocation locking in float-zone silicon
Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 × 10 15cm-3 and 3 × 1014cm-3. The stress required to unlock dislocations pinned by nitrogen impurities was measured as a function of annealing time (0 to 2500 hours) and tempera...
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
Trans Tech Publications Ltd
2005
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The influence of nitrogen on dislocation locking in float-zone silicon
Julkaistu 2005
Conference item