Benchmarking memory and logic gates for trapped-ion quantum computing

<p>Trapped ions are a promising platform for experimental quantum computing, possessing the longest decoherence times and the highest fidelity logic gates of any candidate technology. The challenge remains to scale up ion-trap systems to larger numbers of qubits. This thesis benchmarks two fun...

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Bibliographic Details
Main Author: Hughes, AC
Other Authors: Lucas, D
Format: Thesis
Language:English
Published: 2021
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author Hughes, AC
author2 Lucas, D
author_facet Lucas, D
Hughes, AC
author_sort Hughes, AC
collection OXFORD
description <p>Trapped ions are a promising platform for experimental quantum computing, possessing the longest decoherence times and the highest fidelity logic gates of any candidate technology. The challenge remains to scale up ion-trap systems to larger numbers of qubits. This thesis benchmarks two fundamental operations for scalable trapped-ion quantum computing: the memory performance of a <sup>43</sup>Ca<sup>+</sup> hyperfine qubit, and mixed-element entangling gates between <sup>43</sup>Ca<sup>+</sup> and <sup>88</sup>Sr<sup>+</sup>.</p> <p>Decoherence is usually measured over long timescales, where the memory errors ε are large compared to state-preparation and measurement errors. Information about the small-error regime relevant for quantum computing is inferred by extrapolation. In this work we use randomised benchmarking to directly measure errors as small as 1.2(7) × 10<sup>−6</sup> after a storage time of 1 ms, which is around an order of magnitude smaller than would be expected based on the usual model of exponential decay. We find ε<sub>m</sub> < 10<sup>−4</sup> for up to 50 ms with no additional dynamical decoupling, and ε<sub>m</sub> < 10<sup>−3</sup> for up to 2 seconds using a simple CPMG sequence. These timescales exceed previously-demonstrated gate or measurement times in trapped-ion systems by several orders of magnitude — a requirement for quantum error correction, and a highly desirable feature for near-term processors. The qubit is robust to offsets of the external magnetic-field strength, with ε<sub>m</sub> < 10<sup>-4</sup> for 1 ms even at a 50 mG offset, and we identify phase noise on the reference oscillator as the limiting factor on the memory performance.</p> <p>We provide a comparison of different implementations of mixed-element geometric phase gates in the same experimental system. This includes a light-shift gate which can be implemented on both ion species using a single laser, with a fidelity of 99.8(1)% or 99.7(1)%, measured using partial state tomography or interleaved randomised benchmarking respectively. We also demonstrate several Mølmer–Sørensen gates with measured fidelities of up to 99.6(2)% (by partial state tomography); this mechanism is more susceptible to errors arising from instability of the external magnetic field. For the first time, this pushes mixed-element entangling gate fidelities over the fault-tolerant threshold level (above which error correction is possible), and puts them on par with state-of-the-art single-species gates.</p>
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spelling oxford-uuid:3fdb0b98-3c50-483c-b66e-132495ce71af2024-12-07T16:37:17ZBenchmarking memory and logic gates for trapped-ion quantum computingThesishttp://purl.org/coar/resource_type/c_db06uuid:3fdb0b98-3c50-483c-b66e-132495ce71afEnglishHyrax Deposit2021Hughes, ACLucas, D<p>Trapped ions are a promising platform for experimental quantum computing, possessing the longest decoherence times and the highest fidelity logic gates of any candidate technology. The challenge remains to scale up ion-trap systems to larger numbers of qubits. This thesis benchmarks two fundamental operations for scalable trapped-ion quantum computing: the memory performance of a <sup>43</sup>Ca<sup>+</sup> hyperfine qubit, and mixed-element entangling gates between <sup>43</sup>Ca<sup>+</sup> and <sup>88</sup>Sr<sup>+</sup>.</p> <p>Decoherence is usually measured over long timescales, where the memory errors ε are large compared to state-preparation and measurement errors. Information about the small-error regime relevant for quantum computing is inferred by extrapolation. In this work we use randomised benchmarking to directly measure errors as small as 1.2(7) × 10<sup>−6</sup> after a storage time of 1 ms, which is around an order of magnitude smaller than would be expected based on the usual model of exponential decay. We find ε<sub>m</sub> < 10<sup>−4</sup> for up to 50 ms with no additional dynamical decoupling, and ε<sub>m</sub> < 10<sup>−3</sup> for up to 2 seconds using a simple CPMG sequence. These timescales exceed previously-demonstrated gate or measurement times in trapped-ion systems by several orders of magnitude — a requirement for quantum error correction, and a highly desirable feature for near-term processors. The qubit is robust to offsets of the external magnetic-field strength, with ε<sub>m</sub> < 10<sup>-4</sup> for 1 ms even at a 50 mG offset, and we identify phase noise on the reference oscillator as the limiting factor on the memory performance.</p> <p>We provide a comparison of different implementations of mixed-element geometric phase gates in the same experimental system. This includes a light-shift gate which can be implemented on both ion species using a single laser, with a fidelity of 99.8(1)% or 99.7(1)%, measured using partial state tomography or interleaved randomised benchmarking respectively. We also demonstrate several Mølmer–Sørensen gates with measured fidelities of up to 99.6(2)% (by partial state tomography); this mechanism is more susceptible to errors arising from instability of the external magnetic field. For the first time, this pushes mixed-element entangling gate fidelities over the fault-tolerant threshold level (above which error correction is possible), and puts them on par with state-of-the-art single-species gates.</p>
spellingShingle Hughes, AC
Benchmarking memory and logic gates for trapped-ion quantum computing
title Benchmarking memory and logic gates for trapped-ion quantum computing
title_full Benchmarking memory and logic gates for trapped-ion quantum computing
title_fullStr Benchmarking memory and logic gates for trapped-ion quantum computing
title_full_unstemmed Benchmarking memory and logic gates for trapped-ion quantum computing
title_short Benchmarking memory and logic gates for trapped-ion quantum computing
title_sort benchmarking memory and logic gates for trapped ion quantum computing
work_keys_str_mv AT hughesac benchmarkingmemoryandlogicgatesfortrappedionquantumcomputing