The behavior and transport of hydrogen in silicon solar cells observed through changes in contact resistance
<p style="text-align:justify;">This paper presents a simple method of studying the transport of hydrogen in crystalline silicon, as well as its release from bound forms during annealing at temperatures between 350-450°C. This technique is based upon observations of an increase in th...
| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Conference item |
| Хэвлэсэн: |
IEEE
2018
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