The behavior and transport of hydrogen in silicon solar cells observed through changes in contact resistance

<p style="text-align:justify;">This paper presents a simple method of studying the transport of hydrogen in crystalline silicon, as well as its release from bound forms during annealing at temperatures between 350-450°C. This technique is based upon observations of an increase in th...

詳細記述

書誌詳細
主要な著者: Hamer, P, Li, H, Chan, C, Sen, C, Bonilla, R, Wilshaw, P
フォーマット: Conference item
出版事項: IEEE 2018