Ionization of Rydberg H2 molecules at doped silicon surfaces.
The present study focuses on the interaction of H2 Rydberg molecules with doped silicon semiconductor surfaces. Para-H2 Rydberg states with principal quantum numbers n = 17-21 and core rotational quantum number N(+) = 2 are populated via resonant two-colour two-photon (vacuum ultraviolet-ultraviolet...
Hlavní autoři: | Sashikesh, G, Ford, MS, Softley, T |
---|---|
Médium: | Journal article |
Jazyk: | English |
Vydáno: |
2013
|
Podobné jednotky
-
Surface ionisation of molecular H-2 and atomic H Rydberg states at doped silicon surfaces
Autor: Sashikesh, G, a další
Vydáno: (2014) -
Surface ionisation of molecular H2 and atomic H Rydberg states at doped silicon surfaces
Autor: Sashikesh, G, a další
Vydáno: (2014) -
Detection of electrons in the surface ionization of H Rydberg atoms and H-2 Rydberg molecules
Autor: McCormack, E, a další
Vydáno: (2012) -
Detection of electrons in the surface ionization of H Rydberg atoms and H-2 Rydberg molecules
Autor: McCormack, E, a další
Vydáno: (2012) -
Level crossings in the ionization of H(2) Rydberg molecules at a metal surface.
Autor: McCormack, E, a další
Vydáno: (2010)