Saltar ao contenido
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Idioma
Todos os campos
Title
Autor
Subject
Número de Clasificación
ISBN/ISSN
Tag
Buscar
Avanzado
Investigation of threading dis...
Citar
Text this
Enviar este rexistro por email
Imprimir
Exportar rexistro
Exportar a RefWorks
Exportar a EndNoteWeb
Exportar a EndNote
Permanent link
Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
Detalles Bibliográficos
Main Authors:
Russell, J
,
Zou, J
,
Moon, A
,
Cockayne, D
Formato:
Journal article
Publicado:
2000
Existencias
Descripción
Títulos similares
Staff View
Descripción
Summary:
Títulos similares
Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
por: RussellHarriott, J, et al.
Publicado: (1996)
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
por: Russell-Harriott, J, et al.
Publicado: (1998)
Oval defects in InGaAs/GaAs heterostructures
por: Russell-Harriott, J, et al.
Publicado: (1998)
Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
por: A. A. Maldzhy, et al.
Publicado: (2006-12-01)
Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
por: Zou, J, et al.
Publicado: (1997)