Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Παρόμοια τεκμήρια

• Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
  ανά: RussellHarriott, J, κ.ά.
  Έκδοση: (1996)
• Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
  ανά: Russell-Harriott, J, κ.ά.
  Έκδοση: (1998)
• Oval defects in InGaAs/GaAs heterostructures
  ανά: Russell-Harriott, J, κ.ά.
  Έκδοση: (1998)
• Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
  ανά: A. A. Maldzhy, κ.ά.
  Έκδοση: (2006-12-01)
• Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
  ανά: Zou, J, κ.ά.
  Έκδοση: (1997)