Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Ижил төстэй зүйлс

• Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
  -н: RussellHarriott, J, зэрэг
  Хэвлэсэн: (1996)
• Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
  -н: Russell-Harriott, J, зэрэг
  Хэвлэсэн: (1998)
• Oval defects in InGaAs/GaAs heterostructures
  -н: Russell-Harriott, J, зэрэг
  Хэвлэсэн: (1998)
• Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
  -н: A. A. Maldzhy, зэрэг
  Хэвлэсэн: (2006-12-01)
• Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
  -н: Zou, J, зэрэг
  Хэвлэсэн: (1997)