Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Podobne zapisy

• Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
  od: RussellHarriott, J, i wsp.
  Wydane: (1996)
• Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
  od: Russell-Harriott, J, i wsp.
  Wydane: (1998)
• Oval defects in InGaAs/GaAs heterostructures
  od: Russell-Harriott, J, i wsp.
  Wydane: (1998)
• Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
  od: A. A. Maldzhy, i wsp.
  Wydane: (2006-12-01)
• Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
  od: Zou, J, i wsp.
  Wydane: (1997)