Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
Prif Awduron: | Russell, J, Zou, J, Moon, A, Cockayne, D |
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Fformat: | Journal article |
Cyhoeddwyd: |
2000
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Eitemau Tebyg
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Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
gan: RussellHarriott, J, et al.
Cyhoeddwyd: (1996) -
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
gan: Russell-Harriott, J, et al.
Cyhoeddwyd: (1998) -
Oval defects in InGaAs/GaAs heterostructures
gan: Russell-Harriott, J, et al.
Cyhoeddwyd: (1998) -
Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
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Cyhoeddwyd: (2006-12-01) -
Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
gan: Zou, J, et al.
Cyhoeddwyd: (1997)