Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Bibliografski detalji
Glavni autori:	Russell, J, Zou, J, Moon, A, Cockayne, D
Format:	Journal article
Izdano:	2000

Slični predmeti

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