Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
主要な著者: | Russell, J, Zou, J, Moon, A, Cockayne, D |
---|---|
フォーマット: | Journal article |
出版事項: |
2000
|
類似資料
-
Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
著者:: RussellHarriott, J, 等
出版事項: (1996) -
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
著者:: Russell-Harriott, J, 等
出版事項: (1998) -
Oval defects in InGaAs/GaAs heterostructures
著者:: Russell-Harriott, J, 等
出版事項: (1998) -
Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
著者:: A. A. Maldzhy, 等
出版事項: (2006-12-01) -
Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
著者:: Zou, J, 等
出版事項: (1997)