Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Detalhes bibliográficos
Principais autores:	Russell, J, Zou, J, Moon, A, Cockayne, D
Formato:	Journal article
Publicado em:	2000

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