Ir para o conteúdo
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Idioma
Palavra solta
Título
Autor
Assunto
Área/Cota
ISBN/ISSN
Tag
Pesquisar
Avançada
Investigation of threading dis...
Citar
Enviar por SMS
Enviar por email
Imprimir
Exportar registo
Exportar para RefWorks
Exportar para EndNoteWeb
Exportar para EndNote
Permanent link
Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
Detalhes bibliográficos
Main Authors:
Russell, J
,
Zou, J
,
Moon, A
,
Cockayne, D
Formato:
Journal article
Publicado em:
2000
Exemplares
Descrição
Registos relacionados
Registo fonte
Registos relacionados
Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
Por: RussellHarriott, J, et al.
Publicado em: (1996)
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
Por: Russell-Harriott, J, et al.
Publicado em: (1998)
Oval defects in InGaAs/GaAs heterostructures
Por: Russell-Harriott, J, et al.
Publicado em: (1998)
Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
Por: A. A. Maldzhy, et al.
Publicado em: (2006-12-01)
Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
Por: Zou, J, et al.
Publicado em: (1997)