SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE
The surface concentration of Sb in doped TiO2 rutile ceramics (Ti1 - 5 4xSbxO2 0 < x < 0.1), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measureme...
| Main Authors: | , , , |
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| Format: | Journal article |
| Published: |
1995
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| Summary: | The surface concentration of Sb in doped TiO2 rutile ceramics (Ti1 - 5 4xSbxO2 0 < x < 0.1), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measurements. At low doping levels Sb segregates by substitutional replacement of Ti in a large number of ionic planes whilst at higher Sb doping levels there is evidence of a new SbTiO amorphous surface phase whose thickness involves about five ionic planes. A rationalization of the monotonic decrease of the work function throughout the doping range studied has been proposed. © 1995. |
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