SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE
The surface concentration of Sb in doped TiO2 rutile ceramics (Ti1 - 5 4xSbxO2 0 < x < 0.1), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measureme...
| Main Authors: | , , , |
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| Format: | Journal article |
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1995
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| _version_ | 1797064697909870592 |
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| author | Gulino, A Condorelli, G Fragala, I Egdell, R |
| author_facet | Gulino, A Condorelli, G Fragala, I Egdell, R |
| author_sort | Gulino, A |
| collection | OXFORD |
| description | The surface concentration of Sb in doped TiO2 rutile ceramics (Ti1 - 5 4xSbxO2 0 < x < 0.1), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measurements. At low doping levels Sb segregates by substitutional replacement of Ti in a large number of ionic planes whilst at higher Sb doping levels there is evidence of a new SbTiO amorphous surface phase whose thickness involves about five ionic planes. A rationalization of the monotonic decrease of the work function throughout the doping range studied has been proposed. © 1995. |
| first_indexed | 2024-03-06T21:18:03Z |
| format | Journal article |
| id | oxford-uuid:407967e7-deb5-4e22-b487-f926843f721a |
| institution | University of Oxford |
| last_indexed | 2024-03-06T21:18:03Z |
| publishDate | 1995 |
| record_format | dspace |
| spelling | oxford-uuid:407967e7-deb5-4e22-b487-f926843f721a2022-03-26T14:38:07ZSURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILEJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:407967e7-deb5-4e22-b487-f926843f721aSymplectic Elements at Oxford1995Gulino, ACondorelli, GFragala, IEgdell, RThe surface concentration of Sb in doped TiO2 rutile ceramics (Ti1 - 5 4xSbxO2 0 < x < 0.1), has been measured by means of angle-resolved core level X-ray photoelectron spectroscopy (AR-XPS). Depth profiles have been obtained by alternating Ar+-ion bombardment with core level measurements. At low doping levels Sb segregates by substitutional replacement of Ti in a large number of ionic planes whilst at higher Sb doping levels there is evidence of a new SbTiO amorphous surface phase whose thickness involves about five ionic planes. A rationalization of the monotonic decrease of the work function throughout the doping range studied has been proposed. © 1995. |
| spellingShingle | Gulino, A Condorelli, G Fragala, I Egdell, R SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE |
| title | SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE |
| title_full | SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE |
| title_fullStr | SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE |
| title_full_unstemmed | SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE |
| title_short | SURFACE SEGREGATION OF SB IN DOPED TIO2 RUTILE |
| title_sort | surface segregation of sb in doped tio2 rutile |
| work_keys_str_mv | AT gulinoa surfacesegregationofsbindopedtio2rutile AT condorellig surfacesegregationofsbindopedtio2rutile AT fragalai surfacesegregationofsbindopedtio2rutile AT egdellr surfacesegregationofsbindopedtio2rutile |