Electron-beam-induced activity of defects in silicon
The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. T...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Elsevier
1994
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| Summary: | The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. This effect is termed electron-beam-induced activity (EBIA). An analysis of the EBIC technique for studying transition metal impurities is given and the EBIA of Fe-contaminated silicon is shown to be due to recombination-enhanced dissociation of FeB pairs. |
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