Electron-beam-induced activity of defects in silicon
The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. T...
| Main Authors: | , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
Elsevier
1994
|
| _version_ | 1797065297220337664 |
|---|---|
| author | Wilshaw, P Fell, T Amaku, C Coteau, d |
| author_facet | Wilshaw, P Fell, T Amaku, C Coteau, d |
| author_sort | Wilshaw, P |
| collection | OXFORD |
| description | The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. This effect is termed electron-beam-induced activity (EBIA). An analysis of the EBIC technique for studying transition metal impurities is given and the EBIA of Fe-contaminated silicon is shown to be due to recombination-enhanced dissociation of FeB pairs. |
| first_indexed | 2024-03-06T21:26:37Z |
| format | Journal article |
| id | oxford-uuid:434f9554-735a-4fa9-8ebe-ba46a1198577 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:26:37Z |
| publishDate | 1994 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | oxford-uuid:434f9554-735a-4fa9-8ebe-ba46a11985772022-03-26T14:54:39ZElectron-beam-induced activity of defects in siliconJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:434f9554-735a-4fa9-8ebe-ba46a1198577EnglishSymplectic Elements at OxfordElsevier1994Wilshaw, PFell, TAmaku, CCoteau, dThe results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. This effect is termed electron-beam-induced activity (EBIA). An analysis of the EBIC technique for studying transition metal impurities is given and the EBIA of Fe-contaminated silicon is shown to be due to recombination-enhanced dissociation of FeB pairs. |
| spellingShingle | Wilshaw, P Fell, T Amaku, C Coteau, d Electron-beam-induced activity of defects in silicon |
| title | Electron-beam-induced activity of defects in silicon |
| title_full | Electron-beam-induced activity of defects in silicon |
| title_fullStr | Electron-beam-induced activity of defects in silicon |
| title_full_unstemmed | Electron-beam-induced activity of defects in silicon |
| title_short | Electron-beam-induced activity of defects in silicon |
| title_sort | electron beam induced activity of defects in silicon |
| work_keys_str_mv | AT wilshawp electronbeaminducedactivityofdefectsinsilicon AT fellt electronbeaminducedactivityofdefectsinsilicon AT amakuc electronbeaminducedactivityofdefectsinsilicon AT coteaud electronbeaminducedactivityofdefectsinsilicon |