Growth and characterization of GaAs1and#x2212;xSbx nanowires

Growth and characterization of GaAs1and#x2212;xSbx nanowires

We report the structural and optical characterization of GaAs 1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results d...

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Bibliographic Details
Main Authors:	Yuan, X, Tan, H, Parkinson, P, Wong-Leung, J, Breuer, S, Gao, Q, Jagadish, C
Format:	Conference item
Published:	2012

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