Growth and characterization of GaAs1and#x2212;xSbx nanowires
We report the structural and optical characterization of GaAs 1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results d...
| Egile Nagusiak: | , , , , , , |
|---|---|
| Formatua: | Conference item |
| Argitaratua: |
2012
|