Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs has been achieved by cathodoluminescence at 8 K. Micro...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
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2013
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| _version_ | 1797065330436079616 |
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| author | Zhu, T Oehler, F Reid, B Emery, R Taylor, R Kappers, M Oliver, R |
| author_facet | Zhu, T Oehler, F Reid, B Emery, R Taylor, R Kappers, M Oliver, R |
| author_sort | Zhu, T |
| collection | OXFORD |
| description | We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs has been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields. © 2013 AIP Publishing LLC. |
| first_indexed | 2024-03-06T21:27:06Z |
| format | Journal article |
| id | oxford-uuid:4377ed8a-9aec-4670-a12f-4c00d65de5a0 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:27:06Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | oxford-uuid:4377ed8a-9aec-4670-a12f-4c00d65de5a02022-03-26T14:55:32ZNon-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:4377ed8a-9aec-4670-a12f-4c00d65de5a0EnglishSymplectic Elements at Oxford2013Zhu, TOehler, FReid, BEmery, RTaylor, RKappers, MOliver, RWe report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs has been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields. © 2013 AIP Publishing LLC. |
| spellingShingle | Zhu, T Oehler, F Reid, B Emery, R Taylor, R Kappers, M Oliver, R Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy |
| title | Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy |
| title_full | Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy |
| title_fullStr | Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy |
| title_full_unstemmed | Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy |
| title_short | Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy |
| title_sort | non polar 11 20 ingan quantum dots with short exciton lifetimes grown by metal organic vapor phase epitaxy |
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