Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator
A systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013
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| Subjects: |
| _version_ | 1826269619901431808 |
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| author | Ding, Z Abbas, G Assender, H Morrison, J Sanchez-Romaguera, V Yeates, S Taylor, D |
| author_facet | Ding, Z Abbas, G Assender, H Morrison, J Sanchez-Romaguera, V Yeates, S Taylor, D |
| author_sort | Ding, Z |
| collection | OXFORD |
| description | A systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65 cm<sup>2</sup>/V s and ∼1.00 cm<sup>2</sup>/V s for pentacene and dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b]thiophene (DNTT), respectively, were only observed for a combination of large-grain (∼1–2 <em>μ</em>m) semiconductor morphology coupled with a non-polar dielectric surface. No correlation was found between semiconductor grain size and dielectric surface chemistry. The threshold voltage of pentacene devices shifted from −10 V to −25 V with decreasing surface ester content, but remained close to 0 V for DNTT. |
| first_indexed | 2024-03-06T21:27:55Z |
| format | Journal article |
| id | oxford-uuid:43b63a78-3418-4f6e-901b-40014cbb98f6 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:27:55Z |
| publishDate | 2013 |
| publisher | AIP Publishing LLC |
| record_format | dspace |
| spelling | oxford-uuid:43b63a78-3418-4f6e-901b-40014cbb98f62022-03-26T14:57:13ZImproving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulatorJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:43b63a78-3418-4f6e-901b-40014cbb98f6ElectronicsMaterials SciencesEnglishSymplectic Elements at OxfordAIP Publishing LLC2013Ding, ZAbbas, GAssender, HMorrison, JSanchez-Romaguera, VYeates, STaylor, DA systematic investigation has been undertaken, in which thin polymer buffer layers with different ester content have been spin-coated onto a flash-evaporated, cross-linked diacrylate gate-insulator to form bottom-gate, top-contact organic thin-film transistors. The highest device mobilities, ∼0.65 cm<sup>2</sup>/V s and ∼1.00 cm<sup>2</sup>/V s for pentacene and dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b]thiophene (DNTT), respectively, were only observed for a combination of large-grain (∼1–2 <em>μ</em>m) semiconductor morphology coupled with a non-polar dielectric surface. No correlation was found between semiconductor grain size and dielectric surface chemistry. The threshold voltage of pentacene devices shifted from −10 V to −25 V with decreasing surface ester content, but remained close to 0 V for DNTT. |
| spellingShingle | Electronics Materials Sciences Ding, Z Abbas, G Assender, H Morrison, J Sanchez-Romaguera, V Yeates, S Taylor, D Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator |
| title | Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator |
| title_full | Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator |
| title_fullStr | Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator |
| title_full_unstemmed | Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator |
| title_short | Improving the performance of organic thin film transistors formed on a vacuum flash-evaporated acrylate insulator |
| title_sort | improving the performance of organic thin film transistors formed on a vacuum flash evaporated acrylate insulator |
| topic | Electronics Materials Sciences |
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