Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF state...
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Bibliographic Details
| Main Authors: |
Sohn, J,
Choi, S,
Morris, S,
Bendall, J,
Coles, H,
Hong, W,
Jo, G,
Lee, T,
Welland, M |
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| Format: | Journal article
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| Language: | English |
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| Published: |
2010
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