Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF state...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2010
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| _version_ | 1797065554492653568 |
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| author | Sohn, J Choi, S Morris, S Bendall, J Coles, H Hong, W Jo, G Lee, T Welland, M |
| author_facet | Sohn, J Choi, S Morris, S Bendall, J Coles, H Hong, W Jo, G Lee, T Welland, M |
| author_sort | Sohn, J |
| collection | OXFORD |
| description | We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates. |
| first_indexed | 2024-03-06T21:30:17Z |
| format | Journal article |
| id | oxford-uuid:4478376e-ad84-4dd7-96ed-7094204bf74c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:30:17Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | oxford-uuid:4478376e-ad84-4dd7-96ed-7094204bf74c2022-03-26T15:01:42ZNovel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:4478376e-ad84-4dd7-96ed-7094204bf74cEnglishSymplectic Elements at Oxford2010Sohn, JChoi, SMorris, SBendall, JColes, HHong, WJo, GLee, TWelland, MWe demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 × 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates. |
| spellingShingle | Sohn, J Choi, S Morris, S Bendall, J Coles, H Hong, W Jo, G Lee, T Welland, M Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. |
| title | Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. |
| title_full | Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. |
| title_fullStr | Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. |
| title_full_unstemmed | Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. |
| title_short | Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor. |
| title_sort | novel nonvolatile memory with multibit storage based on a zno nanowire transistor |
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