Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

Novel nonvolatile memory with multibit storage based on a ZnO nanowire transistor.

We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) FET where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF state...

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Bibliographic Details
Main Authors:	Sohn, J, Choi, S, Morris, S, Bendall, J, Coles, H, Hong, W, Jo, G, Lee, T, Welland, M
Format:	Journal article
Language:	English
Published:	2010

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