An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
Mechanistic aspects pertaining to the CBE growth of ZnSe on GaAs from dimethyl-zinc and diethyl-selenium precursors have been investigated using modulated beam scattering techniques in combination with other surface sensitive methods. The Gp VI precursor requires pre-cracking to form Se on either th...
| Main Authors: | , , |
|---|---|
| Format: | Conference item |
| Published: |
1996
|