An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
Mechanistic aspects pertaining to the CBE growth of ZnSe on GaAs from dimethyl-zinc and diethyl-selenium precursors have been investigated using modulated beam scattering techniques in combination with other surface sensitive methods. The Gp VI precursor requires pre-cracking to form Se on either th...
| Main Authors: | , , |
|---|---|
| Format: | Conference item |
| Published: |
1996
|
| Summary: | Mechanistic aspects pertaining to the CBE growth of ZnSe on GaAs from dimethyl-zinc and diethyl-selenium precursors have been investigated using modulated beam scattering techniques in combination with other surface sensitive methods. The Gp VI precursor requires pre-cracking to form Se on either the GaAs substrate or on the ZnSe growth surface. In contrast, dimethyl zinc decomposes readily on GaAs although it also displays a negligible reactive sticking probability on ZnSe. ZnSe CBE growth is possible, however, since the decomposition efficiency of this precursor rises to unity over a wide temperature range in the presence of a simultaneous Se flux. The reactivity patterns observed in III-V and II-VI CBE are compared and contrasted. The results suggest that ALE-type growth approaches should be more successful in the case of the II-VI compounds and that compositional control of the growth matrix may also be more readily achieved for such materials in comparison to the case for the III-V semiconductors. |
|---|