An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
Mechanistic aspects pertaining to the CBE growth of ZnSe on GaAs from dimethyl-zinc and diethyl-selenium precursors have been investigated using modulated beam scattering techniques in combination with other surface sensitive methods. The Gp VI precursor requires pre-cracking to form Se on either th...
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| Format: | Conference item |
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1996
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| _version_ | 1797065610867245056 |
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| author | Foord, J Levoguer, C Davies, G |
| author_facet | Foord, J Levoguer, C Davies, G |
| author_sort | Foord, J |
| collection | OXFORD |
| description | Mechanistic aspects pertaining to the CBE growth of ZnSe on GaAs from dimethyl-zinc and diethyl-selenium precursors have been investigated using modulated beam scattering techniques in combination with other surface sensitive methods. The Gp VI precursor requires pre-cracking to form Se on either the GaAs substrate or on the ZnSe growth surface. In contrast, dimethyl zinc decomposes readily on GaAs although it also displays a negligible reactive sticking probability on ZnSe. ZnSe CBE growth is possible, however, since the decomposition efficiency of this precursor rises to unity over a wide temperature range in the presence of a simultaneous Se flux. The reactivity patterns observed in III-V and II-VI CBE are compared and contrasted. The results suggest that ALE-type growth approaches should be more successful in the case of the II-VI compounds and that compositional control of the growth matrix may also be more readily achieved for such materials in comparison to the case for the III-V semiconductors. |
| first_indexed | 2024-03-06T21:31:06Z |
| format | Conference item |
| id | oxford-uuid:44b45041-ab57-4619-937e-0b4c951ed0c9 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T21:31:06Z |
| publishDate | 1996 |
| record_format | dspace |
| spelling | oxford-uuid:44b45041-ab57-4619-937e-0b4c951ed0c92022-03-26T15:03:15ZAn investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniquesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:44b45041-ab57-4619-937e-0b4c951ed0c9Symplectic Elements at Oxford1996Foord, JLevoguer, CDavies, GMechanistic aspects pertaining to the CBE growth of ZnSe on GaAs from dimethyl-zinc and diethyl-selenium precursors have been investigated using modulated beam scattering techniques in combination with other surface sensitive methods. The Gp VI precursor requires pre-cracking to form Se on either the GaAs substrate or on the ZnSe growth surface. In contrast, dimethyl zinc decomposes readily on GaAs although it also displays a negligible reactive sticking probability on ZnSe. ZnSe CBE growth is possible, however, since the decomposition efficiency of this precursor rises to unity over a wide temperature range in the presence of a simultaneous Se flux. The reactivity patterns observed in III-V and II-VI CBE are compared and contrasted. The results suggest that ALE-type growth approaches should be more successful in the case of the II-VI compounds and that compositional control of the growth matrix may also be more readily achieved for such materials in comparison to the case for the III-V semiconductors. |
| spellingShingle | Foord, J Levoguer, C Davies, G An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques |
| title | An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques |
| title_full | An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques |
| title_fullStr | An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques |
| title_full_unstemmed | An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques |
| title_short | An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques |
| title_sort | investigation of znse growth by chemical beam epitaxy using modulated beam scattering and related techniques |
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