Emission of collimated THz pulses from photo-excited semiconductors
It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, a...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2004
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| _version_ | 1826270189729087488 |
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| author | Johnston, M Dowd, A Driver, R Linfield, E Davies, A Whittaker, D |
| author_facet | Johnston, M Dowd, A Driver, R Linfield, E Davies, A Whittaker, D |
| author_sort | Johnston, M |
| collection | OXFORD |
| description | It is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs. |
| first_indexed | 2024-03-06T21:36:57Z |
| format | Journal article |
| id | oxford-uuid:46965511-8fc6-4e6d-9587-e7e51ca9dee9 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:36:57Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | oxford-uuid:46965511-8fc6-4e6d-9587-e7e51ca9dee92022-03-26T15:14:34ZEmission of collimated THz pulses from photo-excited semiconductorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:46965511-8fc6-4e6d-9587-e7e51ca9dee9EnglishSymplectic Elements at Oxford2004Johnston, MDowd, ADriver, RLinfield, EDavies, AWhittaker, DIt is shown experimentally that surface-field terahertz (THz) emitters can produce well-collimated beams of THz radiation, making them useful devices for time-domain spectroscopy applications. Simulations of the carrier-dynamics are used to explain the mechanism of THz generation in InAs and GaAs, and it is shown that inter-valley scattering of electrons must be considered in order to fully describe THz emission from InAs. |
| spellingShingle | Johnston, M Dowd, A Driver, R Linfield, E Davies, A Whittaker, D Emission of collimated THz pulses from photo-excited semiconductors |
| title | Emission of collimated THz pulses from photo-excited semiconductors |
| title_full | Emission of collimated THz pulses from photo-excited semiconductors |
| title_fullStr | Emission of collimated THz pulses from photo-excited semiconductors |
| title_full_unstemmed | Emission of collimated THz pulses from photo-excited semiconductors |
| title_short | Emission of collimated THz pulses from photo-excited semiconductors |
| title_sort | emission of collimated thz pulses from photo excited semiconductors |
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