Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
The locking of dislocations by oxygen atoms in Czochralski-silicon at temperatures between 350 and 700°C has been studied. Both experimental and theoretical investigations were carried out for different oxygen concentrations, different annealing times (from 10 to 3 × 107 s), and different point defe...
| मुख्य लेखकों: | , , |
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| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
2001
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