A COMPARATIVE-STUDY OF THE ADSORPTION OF HOT-FILAMENT ACTIVATED HYDROCARBONS ON SILICON, GALLIUM-ARSENIDE AND CVD DIAMOND
Adsorption studies of hot filament activated methane and methane-hydrogen mixtures on non-diamond and diamond surfaces reveal considerable differences in both the nature of the species formed on the surface and the subsequent surface lifetimes of these forms. In the case of GaAs(100), no evidence is...
المؤلفون الرئيسيون: | Chua, L, Jackman, R, Kingsley, C, Foord, J |
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التنسيق: | Conference item |
منشور في: |
1994
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مواد مشابهة
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THE INITIAL-STAGES OF DIAMOND GROWTH - AN ADSORPTION STUDY OF HOT-FILAMENT ACTIVATED METHANE AND HYDROGEN ON SI(100)
حسب: Jackman, R, وآخرون
منشور في: (1993) -
RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
حسب: Wilshaw, P, وآخرون
منشور في: (1989) -
A ROUTE FOR THE FORMATION OF CH2 SPECIES DURING DIAMOND CVD
حسب: Jackman, R, وآخرون
منشور في: (1995) -
VLSI fabrication principles : silicon and gallium arsenide /
حسب: 359597 Ghandi, Sorab K.
منشور في: (1994) -
VLSI fabrication principles: silicon and gallium arsenide/
حسب: 359597 Ghandi, Sorab K.
منشور في: (1983)