A COMPARATIVE-STUDY OF THE ADSORPTION OF HOT-FILAMENT ACTIVATED HYDROCARBONS ON SILICON, GALLIUM-ARSENIDE AND CVD DIAMOND
Adsorption studies of hot filament activated methane and methane-hydrogen mixtures on non-diamond and diamond surfaces reveal considerable differences in both the nature of the species formed on the surface and the subsequent surface lifetimes of these forms. In the case of GaAs(100), no evidence is...
Những tác giả chính: | Chua, L, Jackman, R, Kingsley, C, Foord, J |
---|---|
Định dạng: | Conference item |
Được phát hành: |
1994
|
Những quyển sách tương tự
-
THE INITIAL-STAGES OF DIAMOND GROWTH - AN ADSORPTION STUDY OF HOT-FILAMENT ACTIVATED METHANE AND HYDROGEN ON SI(100)
Bằng: Jackman, R, et al.
Được phát hành: (1993) -
RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
Bằng: Wilshaw, P, et al.
Được phát hành: (1989) -
A ROUTE FOR THE FORMATION OF CH2 SPECIES DURING DIAMOND CVD
Bằng: Jackman, R, et al.
Được phát hành: (1995) -
VLSI fabrication principles : silicon and gallium arsenide /
Bằng: 359597 Ghandi, Sorab K.
Được phát hành: (1994) -
VLSI fabrication principles: silicon and gallium arsenide/
Bằng: 359597 Ghandi, Sorab K.
Được phát hành: (1983)