The dissociation of the [a plus c] dislocation in GaN

The dissociation of the [a plus c] dislocation in GaN

In 1952, Cottrell proposed that the Lomer dislocation formed by interaction of two glide dislocations in a fcc crystal could transform into an immobile dislocation by dissociation into partial dislocations bounding a stacking fault, causing a block to further slip, a concept important in work harden...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Hirsch, P, Lozano, J, Rhode, S, Horton, M, Moram, M, Zhang, S, Kappers, M, Humphreys, C, Yasuhara, A, Okunishi, E, Nellist, P
Μορφή:	Journal article
Έκδοση:	2013

Παρόμοια τεκμήρια

A dissociation mechanism for the [a plus c] dislocation in GaN
ανά: Nellist, P, κ.ά.
Έκδοση: (2014)

Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM
ανά: Lozano, J, κ.ά.
Έκδοση: (2014)

Growth modes in heteroepitaxy of InGaN on GaN
ανά: Oliver, R, κ.ά.
Έκδοση: (2005)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
ανά: Oliver, R, κ.ά.
Έκδοση: (2004)

Direct observation of the core structures of threading dislocations in GaN
ανά: Xin, Y, κ.ά.
Έκδοση: (1998)

Carrier localization mechanisms in InGaN/GaN quantum wells
ανά: Watson-Parris, D, κ.ά.
Έκδοση: (2011)

Electrically driven single InGaN/GaN quantum dot emission
ανά: Jarjour, A, κ.ά.
Έκδοση: (2008)

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN
ανά: Yan, J, κ.ά.
Έκδοση: (2004)

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN
ανά: Yan, J, κ.ά.
Έκδοση: (2004)

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN
ανά: Yan, J, κ.ά.
Έκδοση: (2004)

V-shaped dislocations in a GaN epitaxial layer on GaN substrate
ανά: Atsushi Tanaka, κ.ά.
Έκδοση: (2019-09-01)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
ανά: Jarjour, A, κ.ά.
Έκδοση: (2007)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
ανά: Jarjour, A, κ.ά.
Έκδοση: (2007)

An Experimental Study of Dislocation Dynamics in GaN
ανά: Eugene B. Yakimov, κ.ά.
Έκδοση: (2023-06-01)

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
ανά: Collins, D, κ.ά.
Έκδοση: (2009)

Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride.
ανά: Lozano, J, κ.ά.
Έκδοση: (2014)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
ανά: Jarjour, A, κ.ά.
Έκδοση: (2007)

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot
ανά: Jarjour, A, κ.ά.
Έκδοση: (2007)

Two-photon absorption from single InGaN/GaN quantum dots
ανά: Jarjour, A, κ.ά.
Έκδοση: (2006)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
ανά: Oliver, R, κ.ά.
Έκδοση: (2003)

DISSOCIATION OF DISLOCATIONS IN DIAMOND
ανά: Pirouz, P, κ.ά.
Έκδοση: (1983)

Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure: Assessment of possible indium clustering
ανά: Galtrey, M, κ.ά.
Έκδοση: (2007)

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
ανά: Hammersley, S, κ.ά.
Έκδοση: (2012)

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
ανά: Marino, Fabio Alessio, κ.ά.
Έκδοση: (2011)

Three-dimensional atom probe analysis of green- and blue-emitting In(x)Ga(1-x)N/GaN multiple quantum well structures
ανά: Galtrey, M, κ.ά.
Έκδοση: (2008)

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1-xN/GaN quantum wells
ανά: Bennett, SE, κ.ά.
Έκδοση: (2011)

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
ανά: Censong Liu, κ.ά.
Έκδοση: (2023-01-01)

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes
ανά: Severs, J, κ.ά.
Έκδοση: (2014)

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
ανά: Dmytro Kundys, κ.ά.
Έκδοση: (2016-01-01)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
ανά: Kyaw, Zabu, κ.ά.
Έκδοση: (2014)

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field
ανά: Jarjour, A, κ.ά.
Έκδοση: (2008)

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures
ανά: Yao Yin, κ.ά.
Έκδοση: (2015-05-01)

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching
ανά: Fabien C.-P. Massabuau, κ.ά.
Έκδοση: (2020-03-01)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
ανά: Sun, Xiaowei, κ.ά.
Έκδοση: (2013)

Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars
ανά: El-Ella, H, κ.ά.
Έκδοση: (2012)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
ανά: Zhang, Zi-Hui, κ.ά.
Έκδοση: (2013)

Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures
ανά: Maryam Khalilian, κ.ά.
Έκδοση: (2022-02-01)

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
ανά: Weiyi Jin, κ.ά.
Έκδοση: (2024-09-01)

Response to "Comment on 'Three-dimensional atom probe studies of an InxGa1-N-x/GaN multiple quantum well structure: assessment of possible indium clustering'" [Appl. Phys. Lett. 91, 176101, (2007)]
ανά: Galtrey, M, κ.ά.
Έκδοση: (2007)

Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
ανά: Schulz, S, κ.ά.
Έκδοση: (2015)