FREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY
Conduction electrons introduced by doping 3% antimony into tin(IV) oxide have been shown by photoelectron spectroscopy to occupy a band whose density of states profile approximates well to that predicted by free-electron theory. The surface plasmon excitation associated with the carriers gives rise...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1982
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| _version_ | 1797066946669182976 |
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| author | Cox, P Egdell, R Harding, C Orchard, A Patterson, W Tavener, P |
| author_facet | Cox, P Egdell, R Harding, C Orchard, A Patterson, W Tavener, P |
| author_sort | Cox, P |
| collection | OXFORD |
| description | Conduction electrons introduced by doping 3% antimony into tin(IV) oxide have been shown by photoelectron spectroscopy to occupy a band whose density of states profile approximates well to that predicted by free-electron theory. The surface plasmon excitation associated with the carriers gives rise to a feature of 0.55 eV in high resolution electron energy loss spectra. © 1982. |
| first_indexed | 2024-03-06T21:49:18Z |
| format | Journal article |
| id | oxford-uuid:4ab21f5d-8937-42fb-b92e-4c3599a9bf78 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T21:49:18Z |
| publishDate | 1982 |
| record_format | dspace |
| spelling | oxford-uuid:4ab21f5d-8937-42fb-b92e-4c3599a9bf782022-03-26T15:39:05ZFREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPYJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:4ab21f5d-8937-42fb-b92e-4c3599a9bf78EnglishSymplectic Elements at Oxford1982Cox, PEgdell, RHarding, COrchard, APatterson, WTavener, PConduction electrons introduced by doping 3% antimony into tin(IV) oxide have been shown by photoelectron spectroscopy to occupy a band whose density of states profile approximates well to that predicted by free-electron theory. The surface plasmon excitation associated with the carriers gives rise to a feature of 0.55 eV in high resolution electron energy loss spectra. © 1982. |
| spellingShingle | Cox, P Egdell, R Harding, C Orchard, A Patterson, W Tavener, P FREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY |
| title | FREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY |
| title_full | FREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY |
| title_fullStr | FREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY |
| title_full_unstemmed | FREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY |
| title_short | FREE-ELECTRON BEHAVIOR OF CARRIERS IN ANTIMONY-DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY |
| title_sort | free electron behavior of carriers in antimony doped tin iv oxide a study by electron spectroscopy |
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