Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond
Low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p-type without the addition of conventional dopant atoms, are reported. The carrier concentration within the temperature range 10-300 K does not change as ex...
| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Conference item |
| Хэвлэсэн: |
2001
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| Тойм: | Low temperature Hall effect measurements made on diamond films subjected to a hydrogenation process, such that the near surface region becomes p-type without the addition of conventional dopant atoms, are reported. The carrier concentration within the temperature range 10-300 K does not change as expected for most films, actually increasing as the temperature falls. However, polished films display more conventional behaviour in that the carrier concentration falls with falling temperature. A model involving carrier transport within both valance and impurity bands can be considered to explain these observations, leading to the suggestion that the hydrogenation process is capable of creating acceptor states with an activation energy within the range of 10-40 meV. © 2001 Elsevier Science B.V. All rights reserved. |
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